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Presentation:
Watershed 263 small headwater storm drain catchment
hydrology: preliminary water quality results
Belt, K.T., Pouyat, R. V., Stack, W. P., Heisler, G.,
Groffman, P.M., Ghosh, U., Taylorson, A., and J. Zhou
Two small headwater storm drain catchments in
Watershed 263 are being studied with continuous
temperature recorders, stage and velocity gauges,
automated flow paced samplers. We present preliminary
data collected recently at the Baltimore (Bal) and
Lanvale (Lan) Street gauging stations that reveal a
dynamic thermal system, high bacterial concentrations
and large nutrient and metal loads, especially at the
Bal site, which has a higher impervious surface
cover. Relatively warm dry weather flows (22-24 C)
were seen, with great thermal variances suggesting
surface and groundwater hydrologic interactions.
Runoff induced (August) temperature spikes of 2-5 C
(Bal) and <1-4 C (Lan) were common and lasted for
long periods (2-6 hrs), followed by extended elevated
baseflow levels. Generally Bal had more transient
temperature increases, both for storm and dry
weather. Transient, non-storm runoff related changes
are seen in both watersheds. Bacterial concentrations
were high, with storm concentrations of fecal coliform
of 900,000 organisms/100 ml and E .coli values of
364,000/148,000 at Bal/Lan. Concentrations in dry
weather were lower, with mean levels at Bal/Lan of
1,633/877 org/100 ml. BOD5 concentrations were high
(30.5/20.5 mg/l) at the Bal/Lan sites. Cu (36/18
ug/l), Pb (73/28 ug/l), and Zn (143/77 ug/l)
concentrations in storm composites (Bal/Lan) were
high; Bal site concentrations were 60 to 160 % higher
than at Lan. Dissolved metals made up a large part of
the total metals (13/20% for Pb, 50/53 % for Cu, and
51/59% for Zn, at Bal/Lan). Nutrient storm
concentrations were elevated, with concentrations of
nitrate-nitrite N (1.31/1.08 mg/l), TKN (2.55/1.75
mg/l) and total phosphorus (0.67/0.32 mg/l) at the
Bal/Lan sites. The Bal site concentrations were 21,
46, and 108 % higher for N03-N, TKN, and TP than at
Lan.
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